Numerical modeling of reverse recovery characteristic in silicon pin diodes

被引：5
|
作者：
Yamashita, Yusuke [1 ]
Tadano, Hiroshi [1 ]
机构：
[1] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan
来源：
SOLID-STATE ELECTRONICS | 2018年 / 145卷
关键词：
POWER RECTIFIERS; INJECTION CONDITIONS; CURRENT DENSITIES;
D O I：
10.1016/j.sse.2018.02.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result.
引用
收藏
页码：8 / 18
页数：11
相关论文
共 50 条
  • [41] JUNCTION TEMPERATURE-MEASUREMENTS IN REVERSE-BIASED PIN DIODES
    LEIFER, MC
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (02): : 472 - 476
  • [42] On the Reverse Breakdown Behavior of GaAs PIN Diodes for High Power Applications
    Scharf, Patrick
    Velarde Gonzalez, Fabio Alberto
    Lange, Andre
    Urban, Tobias
    Dudek, Volker
    ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY, 2022, 25 (02): : 224 - 234
  • [43] Fast-recovery pin diodes with SiGe anode layers
    Hirose, Fumihiko
    Nagase, Shinichi
    IEEJ Transactions on Electronics, Information and Systems, 2006, 126 (11) : 1340 - 1343
  • [44] Theoretical analysis of forward voltage and reverse recovery charge of silicon p-i-n diodes
    Yamashita, Yusuke
    Machida, Satoru
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [45] Physics-based mixed-mode reverse recovery modeling and optimization of SiPIN and MPS fast recovery diodes
    Cappelluti, F
    Bonani, F
    Furno, M
    Ghione, G
    Carta, R
    Bellemo, L
    Bocchiola, C
    Merlin, L
    MICROELECTRONICS JOURNAL, 2006, 37 (03) : 190 - 196
  • [46] CURRENT FILAMENT FORMATION IN GOLD COMPENSATED SILICON PIN DIODES
    BAUMANN, H
    PIOCH, T
    DAHMEN, H
    JAGER, D
    SCANNING ELECTRON MICROSCOPY, 1986, 1986 : 441 - 446
  • [47] Widening the range in measuring neutron fluences with PIN silicon diodes
    Morin, J
    Arnoud, JC
    David, J
    Zyromski, P
    RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 476 - 480
  • [48] Spatial effects on ideality factor of amorphous silicon pin diodes
    Kroon, MA
    van Swaaij, RACMM
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 994 - 1000
  • [49] Silicon photodiodes and PIN diodes developed at the institute of electron technology
    Wegrzecki, M
    Wegrzecka, I
    Bar, J
    Slysz, W
    Grynglas, M
    Uszynski, A
    Grodecki, R
    Grabiec, P
    Krzeminski, S
    Budzynski, T
    Panas, A
    PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS II, 2004, 5484 : 493 - 502
  • [50] Reverse recovery time reworking of fast recovery diodes for industrial production
    Itthikusumarn, W.
    Jakphet, W.
    Titiroongruang, W.
    2015 International Symposium on Next-Generation Electronics (ISNE), 2015,
12345