Numerical modeling of reverse recovery characteristic in silicon pin diodes

被引：5
|
作者：
Yamashita, Yusuke [1 ]
Tadano, Hiroshi [1 ]
机构：
[1] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan
来源：
SOLID-STATE ELECTRONICS | 2018年 / 145卷
关键词：
POWER RECTIFIERS; INJECTION CONDITIONS; CURRENT DENSITIES;
D O I：
10.1016/j.sse.2018.02.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result.
引用
收藏
页码：8 / 18
页数：11
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