Control of microstructure coarsening of a Ti substrate during diamond film deposition using Ar/H2/CH4 gas mixture

被引：11

作者：

Fu, YQ ^{[1
]}

Loh, NL

Yan, BB

Sun, CQ

Hing, P

机构：

[1] Nanyang Technol Univ, Mat Lab, Sch Mech & Prod Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Appl Sci, Singapore 639798, Singapore

来源：

THIN SOLID FILMS | 2000年 / 359卷 / 02期

关键词：

microstructure coarsening; Ti substrate; diamond film deposition;

D O I：

10.1016/S0040-6090(99)00750-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films were prepared on a pure Ti substrate using the microwave plasma assisted chemical vapor deposition (MW-PACVD) method. The effects of applying two types of gas mixtures (H-2/CH2 and Ar/H-2/CH4) during diamond deposition on the microstructure of a Ti substrate were studied. With H-2/CH4 (196:4),gas mixture, during diamond film deposition, hydrogen diffused into the Ti substrate and led to significant microstructure coarsening and a severe loss in Charpy impact energy. Post dehydrogenation annealing at a temperature of 800 degrees C, could not change the coarse structure of the substrate, thus there was no improvement in Charpy impact energy. With the application of Ar/H-2/CH4 (180:16:4) gas mixture, a smooth and nano-crystalline diamond film was deposited, and there was a minimum change in the substrate microstructure and Charpy impact energy after diamond deposition. The above results provide useful information for the successful application of diamond films (on a Ti substrate) for biomedical and aerospace application. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：215 / 220

页数：6

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