Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2/Ar gas mixture

被引：0

作者：

Yang, Shumin ^{[1
]}

He, Zhoutong ^{[1
]}

Zhu, Dezhang ^{[1
]}

Gong, Jinlong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Appl Phys, Beijing 100864, Peoples R China

来源：

2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of pressure on the deposition of nanocrystalline diamond (NCD) films in a hot filament chemical vapor deposition (HFCVD) system was investigated using CE4/H-2/Ar gas mixture. The reactor pressure was found to have the strongest influence on nucleation of nanocrystalline diamond films. The range of Ar concentration in the CH4/H-2/Ar mixture that permits the deposition of nanocrystalline diamond (NCD) film at 40 torr is 90%, while the Ar concentration needed for the transition into nanocrystalline diamond phase is 50% at 5 torr. Such pressure dependence of the nanocrystalline diamond film growth is suggested to result from two competing effects of pressure on the concentration of reactive species near the film growth surface, and the C-2 density at lower pressure (5 torr) is higher than that at high pressure (40 torr) at the same Ar concentration.

引用

页码：928 / 930

页数：3

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