Resonant Raman scattering by N-related local modes in AlGaAs/InGaAsN multiquantum wells

被引：1
|
作者：
Lazic, S. [1 ]
Calleja, J. M.
Hey, R.
Ploog, K.
机构：
[1] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期
关键词：
InGaAsN multiquantum well; resonant Raman scattering; disorder;
D O I：
10.1016/j.physe.2005.12.053
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report resonant Raman scattering and secondary ion mass spectrometry measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma-assisted molecular beam epitaxy. The appearance of a strong TO band at resonance with nitrogen (N)-related electronic levels has been observed. The N-induced vibration mode at 470 cm(-1) changes in intensity and shape with increasing N and In content. A new vibration mode has been observed at 320 cm(-1), whose intensity scales with the N concentration. This mode is not present in InGaAsN films, so it is linked to the presence of Al. Its frequency is close to the B-1 silent mode of wurtzite GaN. It is attributed to the formation of GaN pairs, near the MQW interfaces as a consequence of the preferential Al-N bonding. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：277 / 280
页数：4
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