A simple design of flat hyperlens for lithography and imaging with half-pitch resolution down to 20 nm

被引：96

作者：

Xiong, Yi ^{[1
]}

Liu, Zhaowei ^{[1
]}

Zhang, Xiang ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, NSF, Nanoscale Sci & Engn Ctr NSEC, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

基金：

美国国家科学基金会;

关键词：

lenses; masks; optical fabrication; photolithography; OPTICAL HYPERLENS; TRANSFORMATION OPTICS; DIFFRACTION LIMIT; PHOTOLITHOGRAPHY; NANOLITHOGRAPHY; SUPERLENS; LIGHT;

D O I：

10.1063/1.3141457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose that a hyperlens can be used for photolithography to generate deep subwavelength arbitrary patterns from diffraction-limited masks. Numerical simulation shows that half-pitch resolution down to 20 nm is possible from a mask with 280 nm period at working wavelength 375 nm. We also extend the hyperlens projection concept from cylindrical interfaces to arbitrary interfaces. An example of a flat interface hyperlens is numerically demonstrated for lithography purposes.

引用

页数：3

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