Light-emitting diodes based on Ga1-xInxAsySb1-y solid solutions grown from lead-containing melts

被引：0
|
作者：
Parkhomenko, YA [1 ]
Astakhova, AP [1 ]
Grebenshchikova, EA [1 ]
Ivanov, ÉV [1 ]
Kunitsyna, EV [1 ]
Yakovlev, YP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 07期
关键词：
D O I：
10.1134/1.1783391
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-emitting diodes (LEDs) with the maximum emission at lambda = 2.3 and 2.44 mum are obtained and characterized. The active region of LEDs is based on Ga1 - xInxAsySb1 - y solid solutions (x = 0.21 and 0.25, respectively) grown by liquid phase epitaxy from lead-containing melts. The room-temperature external quantum yield of the 2.3 and 2.44 mum LEDs is 1.6 and 0.11%, respectively. (C) 2004 MAIK "Nauka/Interperiodica".
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页码：529 / 531
页数：3
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