Effect of Polymer Microstructure on the Nucleation Behavior of Alumina via Atomic Layer Deposition

被引:21
|
作者
Padbury, Richard P. [1 ]
Jur, Jesse S. [1 ]
机构
[1] N Carolina State Univ, Dept Text Engn Chem & Sci, Raleigh, NC 27695 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 32期
关键词
SEQUENTIAL VAPOR INFILTRATION; QUARTZ-CRYSTAL MICROBALANCE; ALD; GROWTH; TRIMETHYLALUMINUM;
D O I
10.1021/jp506456y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic layer deposition is a technique that is able to integrate nanoscale inorganic coatings to organic polymers. Through this process a number of different inorganic coating morphologies are able to form during ALD nucleation on a wide variety of polymers. In this work, we provide a systematic analysis of the ALD nucleation characteristics on polymers that have subtle variations in microstructure, such as, the addition of pendant groups or change in length of the polymer repeat unit. Specifically, in situ quartz crystal microgravimetry is employed to understand the nucleation behavior of alumina ALD in a series of poly n-methacrylate and polyester thin films. The work indicates the effect that a subtle change in polymer microstructure has on the properties of the polymer film. The data indicates that the glass transition temperature of the polymer, as influenced by variations in microstructure, has a significant impact on the absorption/desorption characteristics during TMA/water exposures. Through this systematic approach, we demonstrate that ALD process parameters must be adjusted accordingly to promote the formation of desirable inorganic material interfaces.
引用
收藏
页码:18805 / 18813
页数:9
相关论文
共 50 条
  • [21] Inductively coupled plasma nanoetching of atomic layer deposition alumina
    Han, Anpan
    Chang, Bingdong
    Todeschini, Matteo
    Hoa Thanh Le
    Tiddi, William
    Keil, Matthias
    MICROELECTRONIC ENGINEERING, 2018, 193 : 28 - 33
  • [22] Chiral templating of alumina nanofilms by the atomic layer deposition process
    Shalev, O. L.
    Carmiel, Y.
    Gottesman, R.
    Tirosh, S.
    Mastai, Y.
    CHEMICAL COMMUNICATIONS, 2016, 52 (81) : 12072 - 12075
  • [23] Optical and Electrochemical Properties of a Nanostructured ZnO Thin Layer Deposited on a Nanoporous Alumina Structure via Atomic Layer Deposition
    Cuevas, Ana L.
    Dominguez, Antonia
    Zamudio-Garcia, Javier
    Vega, Victor
    Gonzalez, Ana Silvia
    Marrero-Lopez, David
    Prida, Victor M.
    Benavente, Juana
    MATERIALS, 2024, 17 (06)
  • [24] Wear behavior of annealed atomic layer deposited alumina
    Hsain, Zakaria
    Zeng, Guosong
    Strandwitz, Nicholas C.
    Krick, Brandon A.
    WEAR, 2017, 372 : 139 - 144
  • [25] An alumina stabilized ZnO-graphene anode for lithium ion batteries via atomic layer deposition
    Yu, Mingpeng
    Wang, Aiji
    Wang, Yinshu
    Li, Chun
    Shi, Gaoquan
    NANOSCALE, 2014, 6 (19) : 11419 - 11424
  • [26] Deposition behavior on the barrier layer of porous anodic alumina
    Ding, G. Q.
    Shen, W. Z.
    Ding, J. N.
    Yuan, N. Y.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (02): : 505 - 509
  • [27] Deposition behavior on the barrier layer of porous anodic alumina
    G. Q. Ding
    W. Z. Shen
    J. N. Ding
    N. Y. Yuan
    Applied Physics A, 2010, 99 : 505 - 509
  • [28] Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry
    Hughes, Kevin J.
    Engstrom, James R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (01):
  • [29] Effects of precursors on nucleation in atomic layer deposition of HfO2
    Aarik, J
    Aidla, A
    Kikas, A
    Käämbre, T
    Rammula, R
    Ritslaid, P
    Uustare, T
    Sammelselg, V
    APPLIED SURFACE SCIENCE, 2004, 230 (1-4) : 292 - 300
  • [30] Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides
    Frank, MM
    Chabal, YJ
    Wilk, GD
    APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4758 - 4760