Evaluation of an in-situ particle monitoring system on an MxP plasma etch tool

被引：0
|
作者：
Carlberg, J [1 ]
Hess, D
机构：
[1] Eastman Kodak Co, Microelect Technol Div, Rochester, NY 14650 USA
[2] Wafer Stand Inc, Technol, Tempe, AZ USA
来源：
JOURNAL OF THE IEST | 2000年 / 43卷 / 01期
关键词：
vacuum in-situ particle monitoring; etch; particle; ISPM; AMAT; 5000MxP; correlation;
D O I：
10.17764/jiet.43.1.f4701064657113k1
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Etching is the process where a layer is removed from a wafer surface through openings in a photoresist pattern. To monitor this process, a surface scan was employed. An in-situ particle monitor (ISPM) was installed on a plasma etch tool. The ISPM was incorporated so engineers and technicians could gain real-time information and notification of what is happening inside this tool during processing. Since ISPMs are real-time, they can catch problems as they are occurring. The ISPM detected two major problems on the plasma etch tool within a 3-wk period. The wafer scan data were monitored during this same time frame.
引用
收藏
页码：21 / 23
页数：3
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