Electronic structure and properties of halogenides of IV, V, and VI group elements including transactinides

被引:0
|
作者
Ionova, GV
Pershina, VG
Gerasimova, GA
Mikhalko, VK
Kostrubov, YN
Suraeva, NI
机构
来源
ZHURNAL NEORGANICHESKOI KHIMII | 1996年 / 41卷 / 07期
关键词
D O I
暂无
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
引用
收藏
页码:1190 / 1197
页数:8
相关论文
共 50 条
  • [31] INFLUENCE OF TRANSITION-ELEMENTS OF V-GROUP AND VI-GROUP ON QUENCHED ZIRCONIUM STRUCTURE
    DOBROMYSLOV, AV
    TALUTS, NI
    FIZIKA METALLOV I METALLOVEDENIE, 1991, (08): : 163 - 170
  • [32] Band structures of atomic chains of group IV, III-V, and II-VI elements
    Zaluev, V. A.
    D'yachkov, P. N.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2015, 60 (12) : 1501 - 1508
  • [34] A STUDY OF FITTED AND CALCULATED PARAMETER VALUES IN III, IV, V AND VI SPECTRA OF THE IRON GROUP ELEMENTS
    HANSEN, JE
    RAASSEN, AJJ
    PHYSICA B & C, 1981, 111 (01): : 76 - 101
  • [35] Electronic structure and thermoelectric properties of monolayers of group V atoms
    Do, Dat T.
    Mahanti, Subhendra D.
    ADVANCED MATERIALS, 2018, 2005
  • [36] Electronic band structure of GaN diluted and overdiluted with group-V elements
    Ziembicki, Jakub
    Bartoszewicz, Rafal
    Grodzicki, Milosz
    Scharoch, Pawel
    Kudrawiec, Robert
    Olszewski, Wojciech
    Pucicki, Damian
    Hommel, Detlef
    Polak, Maciej P.
    PHYSICAL REVIEW APPLIED, 2025, 23 (02):
  • [37] Ab initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
    Pollmann, J
    Kruger, P
    Rohlfing, M
    Sabisch, M
    Vogel, D
    APPLIED SURFACE SCIENCE, 1996, 104 : 1 - 16
  • [38] Electronic structure of puckered group IV-VI two-dimensional monolayer materials
    Zaharo, Aflah
    Purqon, Acep
    Winata, Toto
    Saito, Mineo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (07)
  • [39] PHOTOELECTRON-SPECTROSCOPY AND ELECTRONIC-STRUCTURE OF HEAVY GROUP IV-VI DIATOMICS
    WANG, LS
    NIU, B
    LEE, YT
    SHIRLEY, DA
    JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (02): : 899 - 908
  • [40] Effect of defects on electronic structure, chemical bonding, and properties of nitrides of group III and IV p elements and materials on their basis
    Ivanovskii, AL
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2000, 45 : S1 - S36