Photoemission properties of LaB6 thin films for the use in PIDs

被引:0
|
作者
Zimmer, Cordula M. [1 ]
Yoganathan, K. [1 ]
Giebel, F. J. [1 ]
Luetzenkirchen-Hecht, D. [2 ]
Gloesekoetter, P. [3 ]
Kallis, K. T. [1 ]
机构
[1] Tech Univ Dortmund, Inst Intelligent Microsyst, Fac Elect Engn, D-44227 Dortmund, Germany
[2] Berg Univ Wuppertal, Dept Expt Phys Condensed Matter, D-42097 Wuppertal, Germany
[3] Univ Appl Sci Munster, Dept Elect Engn & CS, D-48565 Steinfurt, Germany
来源
2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2014年
关键词
ELECTRICAL-PROPERTIES; GLASS;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
For the improvement of a commercially available photo ionization detector (PID) with respect to its gas selectivity and sensitivity, a thin emitter film (approximate to 20nm) of lanthanum hexaboride (LaB6) was integrated performing the gas detection by photo emitted electrons. To confirm the chosen emitter material's suitability as a photocathode, analyses were performed by X-ray diffraction (XRD) and ultraviolet photoelectron spectroscopy (UPS). Hereby, thin LaB6 films sputtered with higher argon flow rate and sputtering power produced a (100)-oriented film texture yielding work functions in the range of 3.42 to 4.05 eV, accordingly. Photoemission measurements were also realized, whereby quantum efficiency (QE) of thin LaB6 films is still too low compared to laser driven photocathodes when excited by 4.5 eV photons.
引用
收藏
页码:877 / 881
页数:5
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