Investigation of Strong Metallic Ta Reduction in ZrO2/Ta2O5 Multi-laminate Layer Growth

被引：3
|
作者：
Cho, H. C. [1 ]
Park, K. W. [1 ]
Ahn, J. H. [1 ]
Park, C. H. [1 ]
Cho, H. J. [1 ]
Yeom, S. J. [1 ]
Hong, K. [1 ]
Kwak, N. J. [1 ]
机构：
[1] SK Hynix, Icheon Si, Gyeonggi Do, South Korea
来源：
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期
关键词：
DEPOSITION; DIELECTRICS; FILMS;
D O I：
10.1149/06102.0021ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin ZrO2/Ta2O5 multi-laminate layer of similar to 10 nm was grown by atomic layer deposition (ALD) method and it was discussed about the metallic Ta reduction at the interface between ZrO2 and Ta2O5. Metallic Ta 4f(7/2) peak was observed inside of the layer from the result of XPS analysis and it is thought that strong metallic Ta reduction was happened between Ta2O5 and as-coming Zr source (or ZrO2). Also, these results were supported by the Gibbs free energy calculations.
引用
收藏
页码：21 / 25
页数：5
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