Investigation of Strong Metallic Ta Reduction in ZrO2/Ta2O5 Multi-laminate Layer Growth

被引：3
|
作者：
Cho, H. C. [1 ]
Park, K. W. [1 ]
Ahn, J. H. [1 ]
Park, C. H. [1 ]
Cho, H. J. [1 ]
Yeom, S. J. [1 ]
Hong, K. [1 ]
Kwak, N. J. [1 ]
机构：
[1] SK Hynix, Icheon Si, Gyeonggi Do, South Korea
来源：
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期
关键词：
DEPOSITION; DIELECTRICS; FILMS;
D O I：
10.1149/06102.0021ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin ZrO2/Ta2O5 multi-laminate layer of similar to 10 nm was grown by atomic layer deposition (ALD) method and it was discussed about the metallic Ta reduction at the interface between ZrO2 and Ta2O5. Metallic Ta 4f(7/2) peak was observed inside of the layer from the result of XPS analysis and it is thought that strong metallic Ta reduction was happened between Ta2O5 and as-coming Zr source (or ZrO2). Also, these results were supported by the Gibbs free energy calculations.
引用
收藏
页码：21 / 25
页数：5
相关论文
共 50 条
  • [1] Abnormally enhanced dielectric constant in ZrO2/Ta2O5 multi-laminate structures by metallic Ta formation
    Cho, Hyunchol
    Park, Kyung-Woong
    Park, Cheol Hwan
    Cho, Ho Jin
    Yeom, Seung-Jin
    Hong, Kwon
    Kwak, Noh-Jung
    Ahn, Ji-Hoon
    MATERIALS LETTERS, 2015, 154 : 148 - 151
  • [2] Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films
    Kukli, Kaupo
    Kemell, Marianna
    Vehkamaki, Marko
    Heikkila, Mikko J.
    Mizohata, Kenichiro
    Kalam, Kristjan
    Ritala, Mikko
    Leskela, Markku
    Kundrata, Ivan
    Frohlich, Karol
    AIP ADVANCES, 2017, 7 (02):
  • [3] Dielectric study of thin films of Ta2O5 and ZrO2
    Jonsson, AK
    Frenning, G
    Nilsson, M
    Mattsson, MS
    Niklasson, GA
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2001, 8 (04) : 648 - 651
  • [4] INVESTIGATION OF BREAKDOWN OF 2-LAYER TA2O5 FILMS
    VOROBEV, GA
    MOTOSHKIN, VV
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1975, (02): : 151 - 151
  • [5] Bioactive Ceramics Based on ZrO2 Doped with Ta2O5: Preparation and Properties
    Grishchenko, D. N.
    Golub, A. V.
    Kuryavyi, V. G.
    Shlyk, D. Kh.
    Medkov, M. A.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2021, 66 (10) : 1592 - 1599
  • [6] Bioactive Ceramics Based on ZrO2 Doped with Ta2O5: Preparation and Properties
    D. N. Grishchenko
    A. V. Golub
    V. G. Kuryavyi
    D. Kh. Shlyk
    M. A. Medkov
    Russian Journal of Inorganic Chemistry, 2021, 66 : 1592 - 1599
  • [7] Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
    Ismail, Muhammad
    Abbas, Haider
    Mahata, Chandreswar
    Choi, Changhwan
    Kim, Sungjun
    Journal of Materials Science and Technology, 2022, 106 : 98 - 107
  • [8] Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
    Ismail, Muhammad
    Abbas, Haider
    Mahata, Chandreswar
    Choi, Changhwan
    Kim, Sungjun
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 106 : 98 - 107
  • [9] Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
    Muhammad Ismail
    Haider Abbas
    Chandreswar Mahata
    Changhwan Choi
    Sungjun Kim
    JournalofMaterialsScience&Technology, 2022, 106 (11) : 98 - 107
  • [10] Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer
    Choi, HS
    Kim, YT
    Kim, SI
    Choi, IH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B): : 2940 - 2942
12345