High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization

Low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid-phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field-effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid-crystal (LC) and organic lightemitting diode (OLED) flat-panel displays. (C) 2003 Elsevier Ltd. All rights reserved.