Finite element modeling of a Ti based compact RF MEMS series switch design for harsh environment

被引:4
|
作者
Singh, Tejinder [1 ]
Pashaie, Farzaneh [2 ]
机构
[1] Lovely Profess Univ, Discipline Elect & Elect Engn, Phagwara 144402, Punjab, India
[2] Islamic Azad Univ, South Branch, Dept Mechatron, Tehran, Iran
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2015年 / 21卷 / 10期
关键词
Spring Constant; Actuation Voltage; Hafnium Dioxide; Switch Design; High Actuation Voltage;
D O I
10.1007/s00542-014-2329-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Regardless of the excellent RF characteristics that microelectromechanical switches possess in variety of high frequency applications, some of these application areas require switches that could possibly withstand harsher environments like high temperature or high thermal stresses. This paper presents the finite element modeling of a compact RF MEMS DC contact switch design based on titanium material to withstand in such conditions. The switch is designed with meanders on all sides to increase the elastic recovery forces. The proposed switch dimensions are very compact with the total surface area of 0.1 mm2. The modelled switch is optimized for L-band that results in high isolation of 52 dB and very low insertion loss of 0.007 dB at 2 GHz with low actuation voltage of 18.5 V.
引用
收藏
页码:2115 / 2121
页数:7
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