Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

被引：5
|
作者：
Lin, SD
Lee, CP
Hsieh, WH
Suen, YW
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[3] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期
关键词：
D O I：
10.1063/1.1515878
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.
引用
收藏
页码：3007 / 3009
页数：3
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