Improvement of Cu(In,Ga)Se2 photovoltaic performance by adding Cu-poor compounds Cu(In,Ga)3Se5 at Cu(In,Ga)Se2/CdS interface

被引：0

作者：

Toki, Soma ^{[1
]}

Nishimura, Takahito ^{[1
]}

Sugiura, Hiroki ^{[1
]}

Nakada, Kazuyoshi ^{[2
]}

Yamada, Akira ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo, Japan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

Cd diffusion; CdS/CIGS interface; CIGS; Cu-poor; photovoltaic cells; valence band offset;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on the improvement of Cu(In,Ga)Se-2 (CIGS) photovoltaic performance by inserting Cu-poor compounds Cu(In,Ga)(3)Se-5 at CIGS/CdS interface. It was experimentally found that formation of the Cu(In,Ga)(3)Se-5 layer at the CdS/CIGS interface was quite important to boost the photovoltaic performance. Cd diffusion was promoted by introducing the layer, and conductivity type turned to n-type near the surface. As a result, cell performance was improved owing to suppression of recombination at the interface by stronger band-bending. Additionally, it was shown that the interval time before the growth of the Cu(In,Ga)(3)Se-5 layer is important to eliminate the Cu intermixing in CIGS.

引用

页码：512 / 517

页数：6

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