Intrinsic charge transport on the surface of organic semiconductors

被引：1044
|
作者：
Podzorov, V
Menard, E
Borissov, A
Kiryukhin, V
Rogers, JA
Gershenson, ME
机构：
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 08期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevLett.93.086602
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.
引用
收藏
页码：086602 / 1
页数：4
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