Ionizing Radiation Sensor by Using N2 Implanted MONOS Device

被引：0
|
作者：
Hsieh Wen-Ching [1 ]
Wu, Shich-Chuan [2 ]
机构：
[1] Minghsin Univ Sci & Technol, Dept Optoelect Syst Engn, Hsinchu 30068, Taiwan
[2] Natl Nano Device Labs, Hsinchu 30068, Taiwan
来源：
2014 INTERNATIONAL SYMPOSIUM ON COMPUTER, CONSUMER AND CONTROL (IS3C 2014) | 2014年
关键词：
MONOS; Sensor; Gamma; N-2; Nonvolatile; OXIDE-SEMICONDUCTOR STRUCTURES; MOS STRUCTURES; NITRIDE; SILICON; LAYER; TRANSPORT; ELECTRON; FILMS;
D O I：
10.1109/IS3C.2014.271
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The N-2 implantation metal-oxide-nitride-oxide-silicon (hereafter N-2-MONOS) can be candidates for nonvolatile gamma radiation sensors. In the case of N-2-MONOS gamma radiation sensors, the gamma ray radiation induces a significant decrease of threshold voltage. The change of threshold voltage for N-2-MONOS after gamma irradiation has a strong correlation to the dose of gamma ray exposure as well. The N-2-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile ionizing radiation sensing in the future.
引用
收藏
页码：1037 / 1040
页数：4
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