Structural and optical properties of CuIn0.35Al0.65Se2 thin films

被引：20
|
作者：
Srinivas, K.
Kumar, J. N.
Chandra, G. H. [1 ]
Uthanna, S.
机构：
[1] Vellore Inst Technol, Thin Film Lab, Dept Phys, Vellore 632014, Tamil Nadu, India
[2] Sri Venkateswara Univ, Thin Film Lab, Dept Phys, Tirupati 517502, Andhra Pradesh, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2006年 / 17卷 / 12期
关键词：
D O I：
10.1007/s10854-006-9033-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CuIn0.35Al0.65Se2 thin films were deposited onto glass substrates by flash evaporation method. The films deposited at substrate temperatures 613-633 K were nearly stoichiometric, polycrystalline and single phase showing chalcopyrite structure with lattice parameters a = 0.569 nm and c = 1.124 nm. The optical absorption studies revealed a threefold optical structure near the fundamental edge with E (g1) = 1.75 eV, E (g2) = 1.81 eV and E (g3) = 1.99 eV. The crystal-field (Delta(CF)) and spin-orbit (Delta(SO)) splitting parameters were evaluated.
引用
收藏
页码：1035 / 1039
页数：5
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