2005 US Workshop on the Physics and Chemistry of II-VI Materials - Foreword

被引：0

作者：

Sivananthan, S.

Dhar, N. K.

Anter, Y.

机构：

[1] Univ Illinois, Microphys Lab, Chicago, IL 60607 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2006年 / 35卷 / 06期

关键词：

D O I：

10.1007/s11664-006-0232-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1139 / 1139

页数：1

共 50 条

[41] MOVPE GROWTH OF WIDE BANDGAP II-VI MATERIALS
KUKIMOTO, H
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 637 - 643
[42] Heterostructure II-VI materials and devices for infrared imaging
Univ of Illinois at Chicago, Chicago, IL, United States
Conf Optoelectron Microelectron Mater Dev Proc COMMAD, (86-97):
[43] Special issue: II-VI Heterostructures for Short Wavelength Emitters - Foreword
Tamargo, MC
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (02) : 171 - 171
[44] OPTICAL PHYSICS IN III-V II-VI SEMICONDUCTOR SUPERLATTICES
NURMIKKO, AV
ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 378 - 397
[45] Measurement system for optical bistability of II-VI semiconductor materials
Yang, Aihua
Chen, Lianchun
Fan, Xiwu
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 1993, 4 (04): : 218 - 219
[46] PHOTOVOLTAIC HETEROJUNCTIONS INVOLVING CDS AND OTHER II-VI MATERIALS
BUBE, RH
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 440 - 440
[47] MOVPE OF NARROW-BAND GAP II-VI MATERIALS
TRIBOULET, R
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 598 - 604
[48] SPECIAL ISSUE ON THE 1992 UNITED-STATES WORKSHOP ON THE PHYSICS AND CHEMISTRY OF HGCDTE AND OTHER IR MATERIALS - FOREWORD
WATERMAN, JR
RUTH, RP
JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 801 - 801
[49] Alternative materials for II-VI light emitting diodes and lasers
Landwehr, G
Waag, A
BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 17 - 22
[50] Growth and doping of II-VI materials for blue/green lasers
Rakennus, K.
Uusimaa, P.
Likonen, J.
Savolainen, P.
Pessa, M.
Materials Science Forum, 1995, 182-184 : 43 - 46

← 1 2 3 4 5 →