INGAAS-INP UNI-TRAVELING-CARRIER PHOTODIODES FOR HIGH POWER CAPABILITY

被引：0
|
作者：
Chtioui, Mourad [1 ]
Enard, Alain [1 ]
Carpentier, Daniele [1 ]
Bernard, Stephan [1 ]
Rousseau, Benjamin [1 ]
Lelarge, Francois [1 ]
Pommereau, Frederic [1 ]
Achouche, Mohand [1 ]
机构：
[1] Alcatel Thales III V Lab, F-91460 Marcoussis, France
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
high power photodiode; uni-traveling-carrier photodiode; thermal dissipation; series-resistance; space-charge effect; -1dB compression;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We compare two Uni-Traveling-Carrier photodiodes for high power applications. Saturation current is increased from 62mA to 90mA at 20GHz due to improved series-resistance and heat power dissipation. The associated 3-dB bandwidth is shown to increase simultaneously from 30GHz at 40mA to 32GHz at 70mA.
引用
收藏
页码：264 / 267
页数：4
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