Porous Si formation and study of its structural and vibrational properties

被引:11
|
作者
Patel, BK
Mythili, R
Vijayalaxmi, R
Soni, RK
Behera, SN
Sahu, SN
机构
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] Indira Gandhi Ctr Atom Res, Mat Characterizat Grp, Phys Met Sect, Kalpakkam 603102, Tamil Nadu, India
[3] Indian Inst Technol, Dept Phys, New Delhi 110016, India
关键词
porous Si; etching; Raman scattering;
D O I
10.1016/S0921-4526(02)01175-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In situ current (I)-(V) voltage studies were carried out to get a better understanding of the mechanism of formation of porous silicon (PS). It is observed that on decreasing the anodization current density below a critical value (similar to 75 mA cm(-2)) the size of the PS crystallites increases while for its values above 75 mA cm(-2) electropolishing occurs. Raman spectroscopic studies show that the sizes of the Si crystallites are small and change from 4.7 to 3.8 nm when the current densities are increased from 20 to 50 mA cm(-2). Transmission electron micrographs show preferential propagation of pores whereas transmission electron diffraction (TED) patterns show typical crystalline Si with the cubic structure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:146 / 153
页数:8
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