Ultimate-strength germanium nanowires

被引:132
|
作者
Ngo, Lien T.
Almecija, Dorothee
Sader, John E.
Daly, Brian
Petkov, Nikolay
Holmes, Justin D.
Erts, Donats
Boland, John J. [1 ]
机构
[1] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
[2] Ctr Res Adapt Nanostruct & Nanodevices, Dublin, Ireland
[3] Univ Melbourne, Dept Math & Stat, Parkville, Vic 3010, Australia
[4] Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland
[5] Univ Latvia, Inst Chem Phys, LV-1586 Riga, Latvia
关键词
D O I
10.1021/nl0619397
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconducting nanowires (NWs) are important "building blocks" for potential electrical and electromechanical devices. Here, we report on the mechanical properties of supercritical fluid-grown Ge NWs with radii between 20 and 80 nm. An analysis of the bending and tensile stresses during deformation and failure reveals that while the NWs have a Young's modulus comparable to the bulk value, they have an ultimate strength of 15 GPa, which is the maximum theoretical strength of these materials. This exceptional strength is the highest reported for any conventional semiconductor material and demonstrates that these NWs are without defect or flaws that compromise the mechanical properties.
引用
收藏
页码:2964 / 2968
页数:5
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