Linearity Analysis of Intrinsically Switchable Ferroelectric FBAR Filters

被引：0
|
作者：
Lee, Seungku [1 ]
Lee, Victor [1 ]
Sis, Seyit Ahmet [1 ]
Mortazawi, Amir [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词：
Electrostriction; ferroelectric devices; film bulk acoustic resonators (FBARs); intermodulation distortion; PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the linearity analysis of intrinsically switchable ferroelectric thin-film bulk acoustic resonator (FBAR) filters for the first time. The FBARs are based on the barium-strontium-titanate (BST) ferroelectric thin-film material. BST FBAR filters composed of two series FBARs and one shunt FBAR are designed, fabricated, and measured. Input-referred third-order intercept point (IIP3) of more than 26 dBm for a 1.6-GHz filter with an insertion loss of 4.1 dB is obtained.
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页数：3
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