Intrinsically Switchable Ferroelectric BAW Resonators and Filters

被引：0
|
作者：
Lee, Victor [1 ]
Sis, Seyit A. [1 ]
Zhu, Xinen [1 ,2 ]
Mortazawi, Amir [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA
[2] Shanghai Jiao Tong Univ, Univ Michigan Shanghai Jiao Tong Univ Joint Inst, Shanghai 200240, Peoples R China
来源：
40TH EUROPEAN MICROWAVE CONFERENCE | 2010年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, intrinsically switchable radio frequency (RF) resonators and bandpass filters using ferroelectric thin film technology are presented. Ferroelectrics materials exhibit electrostriction and dc electric field induced piezoelectricity. This paper discusses the design and fabrication of intrinsically switchable film bulk acoustic resonators (FBARs), FBAR filters, and contour mode resonators by employing the dc electric field induced piezoelectricity of the ferroelectric BaxSr(1-x)TiO3. Such resonators and filters have the ability to decrease the complexity, power consumption, and cost of frequency agile radios while improving their performance and reliability.
引用
收藏
页码：803 / 806
页数：4
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