Ultra-thin Conformal Coating for Spin-on Doping Applications

被引:2
|
作者
Li, Mingqi [1 ]
Popere, Bhooshan C. [1 ]
Trefonas, Peter [1 ]
Heitsch, Andrew T. [2 ]
Limary, Ratchana [3 ]
Katsumata, Reika [4 ]
Zhang, Yuanyi [4 ]
Segalman, Rachel A. [4 ]
机构
[1] DowDuPont Specialty Prod Div, Elect & Imaging, Marlborough, MA USA
[2] Dow Chem Co USA, Lake Jackson, TX 77566 USA
[3] Lam Res Corp, Austin, TX 78753 USA
[4] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
关键词
3-D conformal coating; spin-on polymeric doping; dopamine; polymer brush; RAFT transfer agent; rapid thermal annealing; FRAGMENTATION CHAIN TRANSFER; POLYMER BRUSHES; RADICAL POLYMERIZATION; DIFFUSION; COPOLYMERS; SURFACES; SEMICONDUCTORS; PHOSPHORUS; DEPOSITION; STRATEGY;
D O I
10.1117/12.2514830
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
As devices become ever smaller and more sophisticated, there is also a general need for creating high quality defect-free thin coatings of polymers on three-dimensional wafer topography. To address this challenge, we developed a spin-on polymer brush material, which comprises of a dopant moiety with a universal adhesive dopamine end group. We demonstrate that the polymer coating is highly conformal and free of pinhole defects, even when only a few nm thick, or when coated over high aspect ratio over 200 nm deep trench topography. Our investigations demonstrate that the dopamine end group enables stable sub-10 nm thick conformal coatings on three-dimensional surfaces. Furthermore, on acute three-dimensional semiconductor topography, the creation of highly doped abrupt, ultra-shallow junctions with lateral control are essential for successful source-drain contacts. In consideration of this need, we extended the above polymer brush concept further by incorporating a suitable implant dopant atom, such as boron, into the monomer structure. After conformal coating and a subsequent rapid thermal annealing process, the dopant atom is driven into the semiconductor substrate underneath the polymer film. This is potentially very useful for uniform all-around doping of 3-dimensional topography such as FinFETs or Nanowire-FETs. A high dopant dosage on silicon substrate with appropriate shallow implant characteristics was demonstrated for the end-functionalized dopant polymer brush, highlighting one of the promising applications of such conformal coatings.
引用
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页数:12
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