Secondary Ion Emission Under Bombardment of GaAs Monocrystal by Molecular Ions of Copper Phthalocyanine

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作者：
Morozov, S. N. [1 ]
Rasulev, U. Kh. [1 ]
机构：
[1] Uzbek Acad Sci, Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan
来源：
2014 TENTH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE (IVESC) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spectra of secondary ion emission in sputtering of GaAs monocrystal by molecular ions CuPc+, 1/4CuPc(+), CuPc2+ within the energy range E-o = 3 - 12 keV have been studied. The preferential yield of the cluster ions Ga-n(+) n with the number of the constituent atoms n more than 20 has been observed. This yield has increased significantly non-additively with the raise in the number of atoms in a molecular ion projectile.
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