Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

被引：2

作者：

Vikharev, A. L. ^{[1
]}

Bogdanov, S. A. ^{[1
]}

Ovechkin, N. M. ^{[1
]}

Ivanov, O. A. ^{[1
]}

Radishev, D. B. ^{[1
]}

Gorbachev, A. M. ^{[1
]}

Lobaev, M. A. ^{[1
]}

Vul, A. Ya. ^{[2
]}

Dideikin, A. T. ^{[2
]}

Kraev, S. A. ^{[1
]}

Korolev, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Fed Res Ctr Inst Appl Phys, Nizhnii Novgorod 603950, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 01期

关键词：

nanocrystalline diamond; thin diamond films; electrical properties of films;

D O I：

10.1134/S106378262101019X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Undoped nanocrystalline diamond (NCD) films less than 1 mu m thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600 degrees C for one hour.

引用

页码：66 / 75

页数：10

共 50 条

[21] Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition
Sharda, T
Soga, T
Jimbo, T
Umeno, M
DIAMOND AND RELATED MATERIALS, 2001, 10 (9-10) : 1592 - 1596
[22] Pulsed microwave plasma-assisted chemical vapour deposition of diamond
Laimer, J
Matsumoto, S
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 1996, 14 (1-3): : 179 - 184
[23] Microwave plasma-assisted chemical vapor deposition for growing diamondss
Bénédic, F
Bougdira, J
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 2001, 56 (300): : 307 - +
[24] Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition
Madaleno, J. C.
Cabral, G.
Titus, E.
Pereira, L.
Gracio, J.
Ali, N.
THIN SOLID FILMS, 2006, 515 (01) : 106 - 112
[25] Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition
Nishitani-Gamo, M
Xiao, CY
Zhang, YF
Yasu, E
Kikuchi, Y
Sakaguchi, I
Suzuki, T
Sato, Y
Ando, T
THIN SOLID FILMS, 2001, 382 (1-2) : 113 - 123
[26] Growth of three-dimensional diamond mosaics by microwave plasma-assisted chemical vapor deposition
Shu, G.
Dai, B.
Ralchenko, V. G.
Bolshakov, A. P.
Khomich, A. A.
Ashkinazi, E. E.
Han, J.
Zhu, J.
CRYSTENGCOMM, 2018, 20 (02) : 198 - 203
[27] Epitaxial growth of diamond on an iridium (100) substrate by microwave plasma-assisted chemical vapor deposition
Tsubota, T
Tsuruga, S
Saito, T
Kusakabe, K
Morooka, S
Maeda, H
PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS, 1999, 555 : 333 - 338
[28] Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis
Asmussen, J.
Grotjohn, T. A.
Schuelke, T.
Becker, M. F.
Yaran, M. K.
King, D. J.
Wicklein, S.
Reinhard, D. K.
APPLIED PHYSICS LETTERS, 2008, 93 (03)
[29] ELECTROSTATIC-PROBE MEASUREMENTS FOR MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF DIAMOND
CERIO, FM
WEIMER, WA
APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3387 - 3389
[30] MORPHOMETRIC ANALYSIS OF DIAMOND CRYSTALS ELABORATED BY MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION - APPLICATION TO TEXTURED FILMS
BARRAT, S
DIEGUEZ, I
MICHEL, H
BAUERGROSSE, E
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 520 - 524

← 1 2 3 4 5 →