resistive emitter;
material science;
radiatively-limited performance;
device physics;
D O I:
10.1117/12.543053
中图分类号:
TP39 [计算机的应用];
学科分类号:
081203 ;
0835 ;
摘要:
The next generation of resistively heated emitter pixels will be required to attain MWIR apparent temperatures on the order of 2000K, which will require pixel temperatures on the order of 3000K. Numerical simulations have been carried out to determine the material properties required to support the desired performance. Research has been performed to identify a set of potential materials for fabricating these devices based on materials science, existing thermophysical properties, thermodynamic stability and compatibility with thin film processing.
机构:
St Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, RussiaSt Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, Russia
Grabovskiy, A. Y.
Mustafaev, A. S.
论文数: 0引用数: 0
h-index: 0
机构:
St Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, RussiaSt Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, Russia
Mustafaev, A. S.
Krizhanovich, A.
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h-index: 0
机构:
St Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, RussiaSt Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, Russia
Krizhanovich, A.
Kuznetsov, V. I.
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h-index: 0
机构:
Ioffe Inst, St Petersburg 194021, RussiaSt Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, Russia
Kuznetsov, V. I.
Sukhomlinov, V. S.
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h-index: 0
机构:
St Petersburg State Univ, Dept Opt, St Petersburg 199034, RussiaSt Petersburg Min Univ, Dept Gen & Tech Phys, St Petersburg 199106, Russia