Electrical behavior of silicon nitride sputtered thin films

被引：28
|
作者：
Vila, M
Prieto, C [1 ]
Ramírez, R
机构：
[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
[2] Univ Carlos III Madrid, Escuela Politecn Super, Dept Fis, Leganes 28911, Spain
来源：
THIN SOLID FILMS | 2004年 / 459卷 / 1-2期
关键词：
silicon nitride thin films; sputtering; insulator conduction mechanism;
D O I：
10.1016/j.tsf.2003.12.082
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is presented the effect of the reactive and non-reactive sputtering preparation, as well as, the atomic composition on the electrical properties and conduction mechanisms. Depending on the preparation conditions, samples present ohmic, Poole-Frenkel and space charge limited current conduction behaviours, as well as several orders of magnitude in resistivity values. As it is reported, impurities and non-stoichiometry play a very important role in the conduction mechanism and therefore on the thin film resistivity. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：195 / 199
页数：5
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