Electrical behavior of silicon nitride sputtered thin films

被引：28

作者：

Vila, M

Prieto, C ^{[1
]}

Ramírez, R

机构：

[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain

[2] Univ Carlos III Madrid, Escuela Politecn Super, Dept Fis, Leganes 28911, Spain

来源：

THIN SOLID FILMS | 2004年 / 459卷 / 1-2期

关键词：

silicon nitride thin films; sputtering; insulator conduction mechanism;

D O I：

10.1016/j.tsf.2003.12.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is presented the effect of the reactive and non-reactive sputtering preparation, as well as, the atomic composition on the electrical properties and conduction mechanisms. Depending on the preparation conditions, samples present ohmic, Poole-Frenkel and space charge limited current conduction behaviours, as well as several orders of magnitude in resistivity values. As it is reported, impurities and non-stoichiometry play a very important role in the conduction mechanism and therefore on the thin film resistivity. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：195 / 199

页数：5

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