Formation of nanometer-scale gap electrodes based on a plasma ashing technique

被引:12
|
作者
Lee, Younghun [1 ]
Roh, Yonghan [1 ]
Kim, Kyoung Seob [1 ]
机构
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
关键词
electrode; PR ashing; e-beam lithography; nano-device;
D O I
10.1016/j.tsf.2005.12.189
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a new and reproducible method to fabricate metal electrodes with a nanometer-scale gap and width, which have been considered as one of the basic building blocks for future nano-devices. The techniques used in this study were the conventional photolithography, e-beam lithography and plasma ashing techniques. Specifically, the plasma ashing process was used to easily form the nanometer-sized gap (10 nm or less) that is difficult to realize by e-beam lithography only. Using the method investigated in this work, we demonstrated that Au electrodes with a nanometer-sized gap and width could be easily fabricated. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:744 / 747
页数:4
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