Low frequency noise in boron doped poly-SiGe resistors

被引：1

作者：

Chen, KM ^{[1
]}

Huang, GW ^{[1
]}

Kuan, JF ^{[1
]}

Huang, HJ ^{[1
]}

Chang, CY ^{[1
]}

Yang, TH ^{[1
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency noise in moderately and heavily boron doped poly-SiGe resistors was studied. The poly-SiGe films were grown using ultra-high vacuum chemical molecular epitaxy system. The Ge content is in the range of 0 similar to 36%. The low frequency noise was measured at room temperature. We find that the low frequency noise in poly-SiGe was almost independent of Ge content for heavily doped sample. However, for moderately doped sample, the noise decreases with the increase of Ge incorporation. This is due to the lower barrier height of grain boundary for high Ge content sample. The carrier mobility fluctuation model can explain this phenomenon.

引用

页码：405 / 408

页数：4

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