X-ray Image Converter Based on GaAs-ZnS Structures

被引：0
|
作者：
Kalygina, V. M. [1 ]
Tyahzev, A. V. [2 ]
Yaskevich, T. M. [1 ]
机构：
[1] Tomsk State Univ, Tomsk 634050, Russia
[2] Siberian Physicotech Inst, Tomsk 634050, Russia
来源：
SIBCON-2009: INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS | 2009年
关键词：
GaAs; X-radiation; solid-state imager converter; exposure rate;
D O I：
10.1109/SIBCON.2009.5044851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solid-state imager converters with optical read-out information for detection of x-ray radiation are studied in the energy range 40 - 140 keV.
引用
收藏
页码：174 / +
页数：2
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