A Nanostructual Microwave Probe Used for Atomic Force Microscope

被引：0
|
作者：
Ju, Y. [1 ]
Hamada, M. [1 ]
Kobayashi, T.
Soyama, H.
机构：
[1] Nagoya Univ, Dept Mech Sci & Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
来源：
DTIP 2008: SYMPOSIUM ON DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS | 2008年
基金：
日本学术振兴会;
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 gm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250X30X15 gm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.
引用
收藏
页码：158 / +
页数：2
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