Optimization of the carrier concentration in phase-separated half-Heusler compounds

被引：49

作者：

Krez, Julia ^{[1
,2
]}

Schmitt, Jennifer ^{[1
]}

Snyder, G. Jeffrey ^{[3
]}

Felser, Claudia ^{[4
]}

Hermes, Wilfried ^{[5
]}

Schwind, Markus ^{[5
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Inorgan & Analyt Chem, D-55099 Mainz, Germany

[2] Johannes Gutenberg Univ Mainz, Grad Sch Excellence Mat Sci Mainz, D-55128 Mainz, Germany

[3] CALTECH, Pasadena, CA 91125 USA

[4] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany

[5] BASF SE, D-67056 Ludwigshafen, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2014年 / 2卷 / 33期

关键词：

TEMPERATURE THERMOELECTRIC PROPERTIES; FIGURE; TRANSPORT; MERIT;

D O I：

10.1039/c4ta03000a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Inspired by the promising thermoelectric properties of phase-separated half-Heusler materials, we investigated the influence of electron doping in the n-type Ti0.3-xZr0.35Hf0 35NiSn compound. The addition of Nb to this compound led to a significant increase in its electrical conductivity, and shifted the maximum Seebeck coefficient to higher temperatures owing to the suppression of intrinsic carriers. This resulted in an enhancement of both the power factor alpha(2)sigma and figure of merit, zT. The applicability of an average effective mass model revealed the optimized electron properties for samples containing Nb. There is evidence in the literature that the average effective mass model is suitable for estimating the optimized carrier concentration of thermoelectric n-type half-Heusler compounds.

引用

页码：13513 / 13518

页数：6

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