Formation of transition metal silicides by high energy ion beam mixing in Mn/Si and Ni/Si single and multilayer samples

被引：15

作者：

Chaudhuri, S

Biswas, S

Gupta, A

Avasthi, DK

Bhattacharyya, D

Teichert, S

Sarkar, DK

机构：

[1] Kalyani Univ, Dept Phys, Kalyani 741235, W Bengal, India

[2] IUC, DAEF, Indore 452001, India

[3] Ctr Nucl Sci, New Delhi 110067, India

[4] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 217卷 / 04期

关键词：

silicides;

D O I：

10.1016/j.nimb.2003.12.020

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Metal silicides are produced by high energy heavy ion (120 MeV Au9+, fluence-1 x 10(13) ions/cm(2)) irradiation in transition metal/silicon (Mn/Si single layer and Ni/Si single and multilayer) samples. X-ray reflectivity (XRR) studies are carried out on both the virgin and irradiated samples to find out the presence of silicides at the interfaces between the metal and the silicon layers. The formation of crystalline metal silicides is confirmed and phases identified by grazing incidence X-ray diffraction (GIXRD) studies. The enhancement of intermixing and silicide formation as a result of irradiation is established in both the Mn/Si and Ni/Si samples. The results are analyzed and interpreted following the thermal spike model where the interaction between the high energy ion and the lattice is determined by processes like electron-phonon and phonon-phonon couplings. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：589 / 597

页数：9

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