Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor

被引：15

作者：

Huang, X. D. ^{[1
]}

Ma, Y. ^{[2
]}

Song, J. Q. ^{[3
]}

Lai, P. T. ^{[3
]}

Tang, W. M. ^{[4
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Technol, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China

[2] Army Engn Univ PLA, Natl Key Lab Electromagnet Environm Effects & Ele, Nanjing 210007, Jiangsu, Peoples R China

[3] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期

基金：

中国国家自然科学基金;

关键词：

InGaZnO (IGZO); InOx; metal-hydroxyl (M-OH); postmetallization annealing (PMA); thin-film transistor (TFT); GATE-BIAS STRESS; IGZO TFTS; PLASMA TREATMENT; STABILITY;

D O I：

10.1109/TED.2018.2797073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deeplevel acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor andmainly affects the carriermobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.

引用

页码：1009 / 1013

页数：5

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