Interferometric wavelength converter operating at 10 Gb/s based on a monolithic-integrated photonic circuit

被引：0

作者：

Rigo, C ^{[1
]}

Coriasso, C ^{[1
]}

Campi, D ^{[1
]}

Stano, A ^{[1
]}

Cacciatore, C ^{[1
]}

Re, D ^{[1
]}

Fornuto, G ^{[1
]}

Soldani, D ^{[1
]}

De Franceschi, R ^{[1
]}

Ghiglieno, F ^{[1
]}

Vallone, M ^{[1
]}

Valenti, P ^{[1
]}

Zucchelli, L ^{[1
]}

Lupo, S ^{[1
]}

Gambini, P ^{[1
]}

机构：

[1] CSELT SpA, Ctr Studi & Lab Telecomun, I-10148 Turin, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

chemical beam epitaxy; interferometric wavelength converter; semiconductor optical amplifier;

D O I：

10.1016/S0022-0248(99)00600-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work we present a wavelength converter based on a Michelson interferometer. It is obtained by monolithic integration of two-semiconductor optical amplifiers with a passive waveguided X-coupler incorporating turning mirrors. It operates in the 1.55 mu m spectral window and allows the wavelength conversion of data streams up to 10 Gb/s, showing open-eye diagrams and extinction-ratio regeneration capabilities. Comparison of two structures with different active layers and their influence on the polarization sensitivity is also presented. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：471 / 475

页数：5

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