Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

被引：16
|
作者：
Ustinov, VM
Zhukov, AE
Kovsh, AR
Maleev, NA
Mikhrin, SS
Tsatsul'nikov, AF
Maximov, MV
Volovik, BV
Bedarev, DA
Kop'ev, PS
Alferov, ZI
Vorob'ev, LE
Firsov, DA
Suvorova, AA
Soshnikov, IP
Werner, P
Ledentsov, NN
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg Tech Univ, St Petersburg 194021, Russia
[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 01期
关键词：
quantum dot; molecular beam epitaxy; semiconductor laser;
D O I：
10.1016/S0026-2692(99)00083-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InCaAs/GaAs quantum well led to achieving the 1.3 mu m spontaneous emission and 1.26 mu m lasing with extremely low threshold current density of 70 A/cm(2) at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 mu m emission at room temperature. FIR emission simultaneous to 0.94 mu m lasing has been observed in InGaAs quantum dot lasers due to intersubband carrier transitions in quantum dots. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
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页码：1 / 7
页数：7
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