An FDTD and MNA based analysis of data transmission on nonuniform interconnections terminated with noisy CMOS circuits

The main objective of this paper is to study data transmission quality along interconnections taking into account damaging aspects such as geometric nonuniformities, discontinuities especially right angle bends and internal noise sources within Complementary-Metal-Oxide-Semiconductor Field-Effect transistor (CMOS) circuits. We propose a comprehensive study based on combining a numerical approach to solve transmission line equations by mean of the Finite Differences centered in the Time Domain method (FDTD), along with the technique of setting eye diagrams. Discontinuities models are included in the developed formulation and then handled by the MNA technique. Numerical theoretical analysis have been examined and compared with ADS software results and measurements. As a result, the effects of different analyzed parameters on signal integrity are thoroughly examined producing useful information for designers.