Mathematical modeling of impurity distribution in the melt meniscus in the growth of profiled sapphire crystals

被引：0

作者：

Borodin, VA ^{[1
]}

Zhdanov, AV ^{[1
]}

Frantsev, DN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2002年 / 47卷 / 05期

关键词：

Crystallization; Mathematical Modeling; Maximum Concentration; Geometric Parameter; Sapphire;

D O I：

10.1134/1.1509410

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The distribution of impurities in the growth of profiled sapphire crystals is simulated. The distribution of impurities was calculated with the use of the diffusion equation with convective terms. The melt flow was found by solving the Navier-Stokes equation. The distributions of impurities over the melt meniscus are obtained at different crystallization rates. The maximum concentration supersaturation in the meniscus is studied as a function of its geometric parameters. (C) 2002 MAN "Nauka/Interperiodica".

引用

页码：885 / 890

页数：6

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