Effect of source/drain overlap region on device performance in a-IGZO thin-film transistors

被引：6

作者：

Nam, Dong-Ho ^{[1
]}

Choi, Kwang-il ^{[1
]}

Park, Sung-Soo ^{[1
]}

Park, Jeong-Gyu ^{[1
]}

Choi, Won-Ho ^{[1
]}

Han, In-Shik ^{[1
]}

Lee, Hi-Deok ^{[1
]}

Jeong, Jae-Kyeong ^{[2
]}

Lee, Ga-Won ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

[2] Samsung SDI Co Ltd, Kyonggi Do, South Korea

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2009年 / 17卷 / 09期

关键词：

a-IGZO; thin-film transistor; source/drain overlap; source/drain offset;

D O I：

10.1889/JSID17.9.735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the effect of source/drain overlap length on the amorphous indium gallium zinc oxide (a-IGZO) TFT performance has been investigated. Results of this paper show that as source/drain overlap length decreases to a negative value forming S/D offset, the threshold voltage and S parameters of a-IGZO TFTs increased and the field-effect mobility decreased. The V(T) variation increases sharply as the channel length decreases because of the large resistance R(offset) when it is formed at a-IGZO source/drain. In the experiment, R(offset) of each 1 mu m, evaluated from the transfer length method (TLM), shows approximately 54-66 k Omega. This means that the source/drain overlap length is a very important control parameter for uniform device characteristics of a-IGZO TFTs.

引用

页码：735 / 738

页数：4

共 50 条

[21] Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Fung, Tze-Ching
Chuang, Chiao-Shun
Nomura, Kenji
Shieh, Han-Ping David
Hosono, Hideo
Kanicki, Jerzy
JOURNAL OF INFORMATION DISPLAY, 2008, 9 (04) : 21 - 29
[22] Effect of X-ray irradiation on a-IGZO and LTPS thin-film transistors for radiography applications
Park, Solah
Song, Min-Kyu
Sung, Taehoon
Kwon, Jang-Yeon
APPLIED SURFACE SCIENCE, 2021, 550
[23] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
Hoshino, Ken
Hong, David
Chiang, Hai Q.
Wager, John F.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) : 1365 - 1370
[24] Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
Hyung, Gun Woo
Wang, Jian-Xun
Li, Zhao-Hui
Koo, Ja-Ryong
Kwon, Sang Jik
Cho, Eou-Sik
Kim, Young Kwan
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (06) : 4052 - 4055
[25] Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
Tsao, S. W.
Chang, T. C.
Huang, S. Y.
Chen, M. C.
Chen, S. C.
Tsai, C. T.
Kuo, Y. J.
Chen, Y. C.
Wu, W. C.
SOLID-STATE ELECTRONICS, 2010, 54 (12) : 1497 - 1499
[26] The Influences of Oxygen Incorporation on the Defect Trap States of a-IGZO Thin-film Transistors
Lo, Chun-Chieh
Hsieh, Tsung-Eong
WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13, 2012, 45 (07): : 239 - 243
[27] Tensile Stress Effect on Performance of a-IGZO TFTs With Source/Drain Offsets
Hasan, Md Mehedi
Billah, Mohammad Masum
Jang, Jin
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) : 204 - 207
[28] Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
Pu, Haifeng
Zhou, Qianfei
Yue, Lan
Zhang, Qun
APPLIED SURFACE SCIENCE, 2013, 283 : 722 - 726
[29] UV-influence Suppressed on the Device Characteristic of a-IGZO Thin-Film Transistors Using Solution Based TiOx
Chou, Cheng-Wei
Lu, Hsueh-Hsing
Ting, Hung-Che
Shih, Tsung-Hsiang
Chen, Chia-Yu
Lin, Yu-Sin
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 1127 - 1130
[30] Drain current reduction by source electrode overlap in hydrogenated amorphous silicon thin-film transistors
1600, American Inst of Physics, Woodbury, NY, USA (76):

← 1 2 3 4 5 →