Reliability Improvement in Amorphous InGaZnO Thin Film Transistors Passivated by Photosensitive Polysilsesquioxane Passivation Layer

We report tie fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a novel photosensitive polysisesquioxam-basal passivation layer using a simple solution process. Results show that tie pholosensitive passivation material is effective in improving tie reliability of a-IGZO. a-IGZO thin film transistors (TFT) passivated by this photosensitive material exhibited a small threshold voltage (Vth) shift of similar to 0.4 V during positive bias stress (PBS), similar to-0.15 V during negative bias stress (NBS) and -2.3 V during negative bias illumination stress (NBIS). These results demonstrate fir large potential of easy to fabricate photosensitive polysilsesquioxane passivation layers as effective passivation material.