Synthesis of ZnO nanowire arrays and their photoluminescence property

被引：37

作者：

Li, P. G. ^{[1
]}

Tang, W. H. ^{[1
]}

Wang, X. ^{[2
]}

机构：

[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China

[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 479卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

Semiconductors; Nanostructured materials; Gas-solid reactions; Optical property; LOW-TEMPERATURE GROWTH; ORDERED ARRAYS; NANOSTRUCTURES; FABRICATION; NANORODS; NITRIDE; GAN;

D O I：

10.1016/j.jallcom.2009.01.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Well-aligned ZnO nanowire arrays were directly fabricated on the photoresist coated Si substrates instead of general metal catalyst coated substrate or some special buffer layers. An important feature of this catalyst-free growth process is that the immiscibility of the zinc oxide-carbon system can provide a thermodynamic driving force for the radial growth of one-dimensional (1D) nanowire arrays. In addition, the influence of thickness of the photoresist on the morphology and photoluminescence (PL) properties of the ZnO nanowire arrays was investigated in detail. It is found that thicker photoresist is contributed to the growth of well-aligned ZnO nanowire arrays with good ultraviolet performance. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：634 / 637

页数：4

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