Analysis of Forward Current-Voltage Characteristics of non-Ideal Ti/4H-SiC Schottky Barriers

被引：2
|
作者：
Ivanov, Pavel A. [1 ]
Potapov, Alexander S. [1 ]
Samsonova, Tat'yana P. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
Schottky diode; ideality factor; interlayer; interface states; ELECTRICAL CHARACTERISTICS; DIODES;
D O I：
10.4028/www.scientific.net/MSF.615-617.431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Forward current-voltage characteristics of non-ideal Ti/4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts Such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined.
引用
收藏
页码：431 / 434
页数：4
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