Structure and field emission of graphene layers on top of silicon nanowire arrays

被引：16
|
作者：
Huang, Bohr-Ran [1 ,2 ]
Chan, Hui-Wen [1 ,2 ]
Jou, Shyankay [3 ]
Chen, Guan-Yu [1 ,2 ]
Kuo, Hsiu-An [3 ]
Song, Wan-Jhen [3 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Electro Opt Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 106, Taiwan
来源：
APPLIED SURFACE SCIENCE | 2016年 / 362卷
关键词：
Graphene; Silicon nanowires; Transfer print; Field emission; ELECTRON-EMISSION; SINGLE-LAYER; LARGE-AREA; FREESTANDING GRAPHENE; MULTILAYER GRAPHENE; RAMAN-SPECTROSCOPY; FILMS; SCATTERING; GROWTH;
D O I：
10.1016/j.apsusc.2015.11.256
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single-to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G' bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/mu m, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/mu m, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：250 / 256
页数：7
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