Structural-phase ordering in Ta2O5-p-Si heterosystem enhanced by microwave processing

被引：0

作者：

Atanassova, E ^{[1
]}

Boltovets, NS ^{[1
]}

Kolyadina, EY ^{[1
]}

Konakova, RV ^{[1
]}

Koprinarova, J ^{[1
]}

Matveeva, LA ^{[1
]}

Milenin, VV ^{[1
]}

Mitin, VF ^{[1
]}

Shynkarenko, VV ^{[1
]}

Voitsikhovskyi, DI ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm(2), and processing duration of 10 s) in Ta2O5-p-Si heterosystem and MIS structures with Ta2O5 insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta2O5/p-Si interface becomes essentially ordered.

引用

页码：531 / 534

页数：4

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