Structural-phase ordering in Ta2O5-p-Si heterosystem enhanced by microwave processing

被引：0

作者：

Atanassova, E ^{[1
]}

Boltovets, NS ^{[1
]}

Kolyadina, EY ^{[1
]}

Konakova, RV ^{[1
]}

Koprinarova, J ^{[1
]}

Matveeva, LA ^{[1
]}

Milenin, VV ^{[1
]}

Mitin, VF ^{[1
]}

Shynkarenko, VV ^{[1
]}

Voitsikhovskyi, DI ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm(2), and processing duration of 10 s) in Ta2O5-p-Si heterosystem and MIS structures with Ta2O5 insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta2O5/p-Si interface becomes essentially ordered.

引用

页码：531 / 534

页数：4

共 50 条

[1] Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si
Kolyadina, E. Yu.
Konakova, R. V.
Matveeva, L. A.
Mitin, V. F.
Shynkarenko, V. V.
Atanassova, E.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2008, 11 (04) : 311 - 318
[2] Structural, dielectric and optical properties of Ta2O5-Bi2O3-P2O5 phosphate glasses
Laourayed, Mohamed
Alaoui, Yasmina
Er-rafai, Asmae
El Mouzahim, Mouad
El Moudane, Mouloud
Abid, Mohammed
Beraich, Mestapha
Guenbour, Abdellah
Bellaouchou, Abdelkbir
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2022, 97
[3] Structural and electrical properties of Ta2O5 thin films deposited on Si(100) from Ta(OC2H5)5 precursor
Jolly, F
Passacantando, M
Salerni, V
Lozzi, L
Picozzi, P
Santucci, S
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 322 (1-3) : 233 - 239
[4] Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure
Reddy, N. Nanda Kumar
Akkera, Harish Sharma
Sekhar, M. Chandra
Uthanna, S.
SILICON, 2019, 11 (01) : 159 - 164
[5] Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure
N. Nanda Kumar Reddy
Harish Sharma Akkera
M. Chandra Sekhar
S. Uthanna
Silicon, 2019, 11 : 159 - 164
[6] Effects of plasma prenitridation and postdeposition annealing on the structural and dielectric characteristics of the Ta2O5/Si system
Lai, YS
Chen, KJ
Chen, JS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (07) : F63 - F68
[7] Structural Phase Transition and Charge-Ordering Effect in η-Na1.286V2O5.
Duc, Fabienne
Millet, Patrice
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2004, 60 : S59 - S59
[8] Enhanced dielectric properties of thin Ta2O5 films grown on 65 nm SiO2/Si
Kolkovsky, Vl.
Kurth, E.
Kunath, C.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 10-12, 2016, 13 (10-12): : 786 - 789
[9] Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si
Noh, YS
Chatterjee, S
Nandi, S
Samanta, SK
Maiti, CK
Maikap, S
Choi, WK
MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 637 - 642
[10] The effect of ZnO ⇆ Ta2O5 substitution on the structural and thermal properties of SiO2-ZnO-SrO-CaO-P2O5 glasses
Alhalawani, Adel M. F.
Towler, Mark R.
MATERIALS CHARACTERIZATION, 2016, 114 : 218 - 224

← 1 2 3 4 5 →